8 September 2016 Electron-beam lithography with character projection technique for high-throughput exposure with line-edge quality control
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Abstract
The high throughput of character projection (CP) electron-beam (EB) lithography makes it a promising technique for low-to-medium volume device fabrication with regularly arranged layouts, such as for standard-cell logics and memory arrays. However, non-VLSI applications such as MEMS and MOEMS may not be able to fully utilize the benefits of the CP method due to the wide variety of layout figures including curved and oblique edges. In addition, the stepwise shapes that appear because of the EB exposure process often result in intolerable edge roughness, which degrades device performances. In this study, we propose a general EB lithography methodology for such applications utilizing a combination of the CP and variable-shaped beam methods. In the process of layout data conversion with CP character instantiation, several control parameters were optimized to minimize the shot count, improve the edge quality, and enhance the overall device performance. We have demonstrated EB shot reduction and edge-quality improvement with our methodology by using a leading-edge EB exposure tool, ADVANTEST F7000S-VD02, and a high-resolution hydrogen silsesquioxane resist. Atomic force microscope observations were used to analyze the resist edge profiles’ quality to determine the influence of the control parameters used in the data conversion process.
© 2016 Society of Photo-Optical Instrumentation Engineers (SPIE)
Rimon Ikeno, Satoshi Maruyama, Yoshio Mita, Makoto Ikeda, Kunihiro Asada, "Electron-beam lithography with character projection technique for high-throughput exposure with line-edge quality control," Journal of Micro/Nanolithography, MEMS, and MOEMS 15(3), 031606 (8 September 2016). https://doi.org/10.1117/1.JMM.15.3.031606 . Submission:
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