23 August 2016 Energy deposition in ultrathin extreme ultraviolet resist films: extreme ultraviolet photons and keV electrons
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Abstract
The absorbed energy density (eV/cm3) deposited by extreme ultraviolet (EUV) photons and electron beam (EB) high-keV electrons is proposed as a metric for characterizing the sensitivity of EUV resist films. Simulations of energy deposition are used to calculate the energy density as a function of the incident aerial flux (EUV: mJ/cm2, EB: μC/cm2). Monte Carlo calculations for electron exposure are utilized, and a Lambert–Beer model for EUV absorption. The ratio of electron flux to photon flux which results in equivalent energy density is calculated for a typical organic chemically amplified resist film and a typical inorganic metal-oxide film. This ratio can be used to screen EUV resist materials with EB measurements and accelerate advances in EUV resist systems.
© 2016 Society of Photo-Optical Instrumentation Engineers (SPIE)
David F. Kyser, David F. Kyser, Nicholas K. Eib, Nicholas K. Eib, Nicholas W. M. Ritchie, Nicholas W. M. Ritchie, } "Energy deposition in ultrathin extreme ultraviolet resist films: extreme ultraviolet photons and keV electrons," Journal of Micro/Nanolithography, MEMS, and MOEMS 15(3), 033507 (23 August 2016). https://doi.org/10.1117/1.JMM.15.3.033507 . Submission:
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