19 July 2016 Improvement of optical proximity-effect correction model accuracy by hybrid optical proximity-effect correction modeling and shrink correction technique for 10-nm node process
Author Affiliations +
Abstract
The model accuracy of optical proximity-effect correction (OPC) was investigated by two modeling methods for a 10-nm node process. The first method is to use contours of two-dimensional structures extracted from critical dimension-scanning electron microscope (CD-SEM) images combined with conventional CDs of one-dimensional structures. The accuracy of this hybrid OPC model was compared with that of a conventional OPC model, which was created with only CD data, in terms of root-mean-square (RMS) error for metal and contact layers of 10-nm node logic devices. Results showed improvement of model accuracy with the use of hybrid OPC modeling by 23% for contact layer and 18% for metal layer, respectively. The second method is to apply a correction technique for resist shrinkage caused by CD-SEM measurement to extracted contours for improving OPC model accuracy. The accuracy of OPC model with shrink correction was compared with that without shrink correction, and total RMS error was decreased by 12% by using the shrink correction technique. It can be concluded that the use of CD-SEM contours and the shrink correction of contours are effective to improve the accuracy of OPC model for the 10-nm node process.
© 2016 Society of Photo-Optical Instrumentation Engineers (SPIE)
Keiichiro Hitomi, Scott Halle, Marshal Miller, Ioana Graur, Nicole Saulnier, Derren Dunn, Nobuhiro Okai, Shoji Hotta, Atuko Yamaguchi, Hitoshi Komuro, Toru Ishimoto, Shunsuke Koshihara, Yutaka Hojo, "Improvement of optical proximity-effect correction model accuracy by hybrid optical proximity-effect correction modeling and shrink correction technique for 10-nm node process," Journal of Micro/Nanolithography, MEMS, and MOEMS 15(3), 034002 (19 July 2016). https://doi.org/10.1117/1.JMM.15.3.034002 . Submission:
JOURNAL ARTICLE
8 PAGES


SHARE
RELATED CONTENT


Back to Top