17 October 2016 Achromatic Talbot lithography with partially coherent extreme ultraviolet radiation: process window analysis
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Abstract
The main purpose of this work is the experimental determination of the process window for achromatic Talbot lithography with partially coherent extreme ultraviolet (EUV) radiation. This work has been performed using the EUV laboratory exposure tool. It consists of a discharge produced plasma source with a direct beam path to a phase-shifting transmission mask, avoiding losses due to additional optical components, the photoresist-coated wafer, and a positioning system for each component. Both the source and the mask are optimized for 11-nm wavelength. The process window has been identified by a systematic analysis of several exposure series. The optimization of exposure parameters resulted in 50-nm half-pitch of the wafer features using a transmission mask with a rectangular dot array of 70-nm half-pitch. The depth of field is found to be 20  μm, and it can be extended by spatial filtering. The exposure dose and mask–wafer distance are varied around their optimal values to estimate the process window, using defectivity of the pattern as a control parameter.
© 2016 Society of Photo-Optical Instrumentation Engineers (SPIE)
Sascha Brose, Sascha Brose, Jenny Tempeler, Jenny Tempeler, Serhiy Danylyuk, Serhiy Danylyuk, Peter Loosen, Peter Loosen, Larissa Juschkin, Larissa Juschkin, } "Achromatic Talbot lithography with partially coherent extreme ultraviolet radiation: process window analysis," Journal of Micro/Nanolithography, MEMS, and MOEMS 15(4), 043502 (17 October 2016). https://doi.org/10.1117/1.JMM.15.4.043502 . Submission:
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