7 November 2016 Design method and algorithms for directed self-assembly aware via layout decomposition in sub-7 nm circuits
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Abstract
Major advancements in the directed self-assembly (DSA) of block copolymers have shown the technique’s strong potential for via layer patterning in advanced technology nodes. Molecular scale pattern precision along with low cost processing promotes DSA technology as a great candidate for complementing conventional photolithography. Our studies show that decomposition of via layers with 193-nm immersion lithography in realistic circuits below the 7-nm node would require a prohibitive number of multiple patterning steps. The grouping of vias through templated DSA can resolve local conflicts in high density areas, limiting the number of required masks, and thus cutting a great deal of the associated costs. A design method for DSA via patterning in sub-7-nm nodes is discussed. We present options to expand the list of usable DSA templates and we formulate cost functions and algorithms for the optimal DSA-aware via layout decomposition. The proposed method works
© 2016 Society of Photo-Optical Instrumentation Engineers (SPIE)
Ioannis Karageorgos, Julien Ryckaert, Roel Gronheid, Maryann C. Tung, H.-S. Philip Wong, Evangelos Karageorgos, Kris Croes, Joost Bekaert, Geert Vandenberghe, Michele Stucchi, Wim Dehaene, "Design method and algorithms for directed self-assembly aware via layout decomposition in sub-7 nm circuits," Journal of Micro/Nanolithography, MEMS, and MOEMS 15(4), 043506 (7 November 2016). https://doi.org/10.1117/1.JMM.15.4.043506 . Submission:
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