6 October 2016 Fabrication and analysis of radiofrequency MEMS series capacitive single-pole double-throw switch
Author Affiliations +
J. of Micro/Nanolithography, MEMS, and MOEMS, 15(4), 045001 (2016). doi:10.1117/1.JMM.15.4.045001
A compact radiofrequency (RF) MEMS single-pole double-throw (SPDT) switch based on series capacitive configuration is proposed. The critical process parameters are analyzed to improve the fabrication process. A technique of cold–hot thermal shock for lift-off method is explored. The residual stress in the structure is quantified by lancet test structures that come out to be 51 MPa. Effect of residual stress on actuation voltage is explored, which changes its value from 24 to 22 V. Resonance frequency and switching speed of the switch are 11 kHz and 44  μs, respectively, measured using laser Doppler vibrometer. Measured bandwidth of the SPDT switch is 20 GHz (5 to 25 GHz), which is verified with finite element method simulations in high frequency structure simulator© and an equivalent LCR circuit in advanced design system©. Insertion loss of the switch lies in −0.1 to −0.5  dB with isolation better than −20  dB for the above-mentioned bandwidth.
© 2016 Society of Photo-Optical Instrumentation Engineers (SPIE)
Deepak Bansal, Anuroop Bajpai, Prem Kumar, Maninder Kaur, Kamaljit Rangra, "Fabrication and analysis of radiofrequency MEMS series capacitive single-pole double-throw switch," Journal of Micro/Nanolithography, MEMS, and MOEMS 15(4), 045001 (6 October 2016). https://doi.org/10.1117/1.JMM.15.4.045001


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