8 February 2017 X-ray scattering critical dimensional metrology using a compact x-ray source for next generation semiconductor devices
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Abstract
Semiconductor devices continue to shrink in size with every generation. These ever smaller structures are challenging the resolution limits of current analytical and inline metrology tools. We will discuss the results of a study of critical dimension small angle x-ray scattering (CDSAXS) comparing the measured intensity from a laboratory source and a synchrotron to determine the improvements in compact x-ray source technology necessary to make CDSAXS a high throughput metrology method. We investigated finFET test structures with and without a high- k gate dielectric coating. The HfO 2 -based high- k gate dielectric substantially increased the scattering intensity. We found that single-angle laboratory source measurements of 15 min from HfO 2 -coated finFETs had sufficient scattering intensity to measure the higher order peaks necessary for obtaining high-resolution dimensional fits. Identical bare silicon finFETs required at least 2 h of exposure time for equivalent data quality. Using these structures, we measured the scattering efficiency and determined the required photon flux for next generation x-ray sources to make an inline CDSAXS tool high throughput.
© 2017 Society of Photo-Optical Instrumentation Engineers (SPIE)
R. Joseph Kline, R. Joseph Kline, Daniel F. Sunday, Daniel F. Sunday, Donald Windover, Donald Windover, Benjamin D. Bunday, Benjamin D. Bunday, } "X-ray scattering critical dimensional metrology using a compact x-ray source for next generation semiconductor devices," Journal of Micro/Nanolithography, MEMS, and MOEMS 16(1), 014001 (8 February 2017). https://doi.org/10.1117/1.JMM.16.1.014001 . Submission: Received: 30 September 2016; Accepted: 17 January 2017
Received: 30 September 2016; Accepted: 17 January 2017; Published: 8 February 2017
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