29 June 2017 High-precision CD measurement using energy-filtering SEM techniques
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Abstract
Voltage contrast (VC) images obtained using an energy filter (EF) were used to measure the bottom surface of high-aspect-ratio structures. The VC images obtained using the conventional EF were sensitive to variations in wafer potential. Since CD-SEM metrology requires precise EF voltage control when using VC images, we developed an EF voltage correction method to be used at each measurement point. Consequently, bottom-edge measurement, independent of the wafer potential fluctuations, was achieved using the newly developed EF. Our developed technique is effective for CD-SEM metrology using VC images.
© 2017 Society of Photo-Optical Instrumentation Engineers (SPIE)
Daisuke Bizen, Makoto Sakakibara, Makoto Suzuki, Yoshinori Momonoi, Hajime Kawano, "High-precision CD measurement using energy-filtering SEM techniques," Journal of Micro/Nanolithography, MEMS, and MOEMS 16(2), 024004 (29 June 2017). https://doi.org/10.1117/1.JMM.16.2.024004 . Submission: Received: 5 April 2017; Accepted: 12 June 2017
Received: 5 April 2017; Accepted: 12 June 2017; Published: 29 June 2017
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