12 September 2017 Nanofabrication of 10-nm T-shaped gates using a double patterning process with electron beam lithography and dry etch
Author Affiliations +
Abstract
A process to fabricate T-shaped gates with the footprint scaling down to 10 nm using a double patterning procedure is reported. One of the keys in this process is to separate the definition of the footprint from that for the gate-head so that the proximity effect originated from electron forward scattering in the resist is significantly minimized, enabling us to achieve as narrow as 10-nm foot width. Furthermore, in contrast to the reported technique for 10-nm T-shaped profile in resist, this process utilizes a metallic film with a nanoslit as an etch mask to form a well-defined 10-nm-wide foot in a SiNx layer by reactive ion etch. Such a double patterning process has demonstrated enhanced reliability. The detailed process is comprehensively described, and its advantages and limitations are discussed. Nanofabrication of InP-based high-electron-mobility transistors using the developed process for 10- to 20-nm T-shaped gates is currently under the way.
© 2017 Society of Photo-Optical Instrumentation Engineers (SPIE)
Jinhai Shao, Jianan Deng, W. Lu, Yifang Chen, "Nanofabrication of 10-nm T-shaped gates using a double patterning process with electron beam lithography and dry etch," Journal of Micro/Nanolithography, MEMS, and MOEMS 16(3), 033508 (12 September 2017). https://doi.org/10.1117/1.JMM.16.3.033508 . Submission: Received: 11 May 2017; Accepted: 17 August 2017
Received: 11 May 2017; Accepted: 17 August 2017; Published: 12 September 2017
JOURNAL ARTICLE
5 PAGES


SHARE
Back to Top