20 September 2017 Simulation flow and model verification for laser direct-write lithography
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Abstract
A simulation flow for laser direct-write lithography (LDWL), a maskless lithography process in which a focused laser beam is scanned through a photoresist, is proposed. The simulation flow includes focusing of Gaussian beams, photoresist exposure, free-radical polymerization chemistry of the photoresist, and photoresist development. We applied the simulation method to investigate the scaling of feature sizes or linewidths for a varying number of exposure cycles at a total constant exposure dose. Experimental results from literature demonstrate that exposing the photoresist over multiple exposure cycles causes a reduction in linewidths. We explore possible reasons for this phenomenon and conclude that radical losses occurring between subsequent exposures provide a possible explanation of the observed effects. Furthermore, we apply the developed simulation method to analyze lithographic structures that were fabricated by a combination of LDWL and nanoimprint lithography. The simulation results agree with the experimental tendencies of a reduced likelihood of overexposures with an increase in the number of exposure cycles.
© 2017 Society of Photo-Optical Instrumentation Engineers (SPIE)
Temitope Onanuga, Maximilian Rumler, Andreas Erdmann, "Simulation flow and model verification for laser direct-write lithography," Journal of Micro/Nanolithography, MEMS, and MOEMS 16(3), 033511 (20 September 2017). https://doi.org/10.1117/1.JMM.16.3.033511 . Submission: Received: 21 June 2017; Accepted: 23 August 2017
Received: 21 June 2017; Accepted: 23 August 2017; Published: 20 September 2017
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