19 August 2017 Optical proximity correction for anamorphic extreme ultraviolet lithography
Author Affiliations +
J. of Micro/Nanolithography, MEMS, and MOEMS, 16(4), 041004 (2017). doi:10.1117/1.JMM.16.4.041004
The change from isomorphic to anamorphic optics in high numerical aperture extreme ultraviolet scanners necessitates changes to the mask data preparation flow. The required changes for each step in the mask tape out process are discussed, with a focus on optical proximity correction (OPC). When necessary, solutions to new problems are demonstrated and verified by rigorous simulation. Additions to the OPC model include accounting for anamorphic effects in the optics, mask electromagnetics, and mask manufacturing. The correction algorithm is updated to include awareness of anamorphic mask geometry for mask rule checking. OPC verification through process window conditions is enhanced to test different wafer scale mask error ranges in the horizontal and vertical directions. This work will show that existing models and methods can be updated to support anamorphic optics without major changes. Also, the larger mask size in the Y direction can result in better model accuracy, easier OPC convergence, and designs that are more tolerant to mask errors.
© 2017 Society of Photo-Optical Instrumentation Engineers (SPIE)
Chris Clifford, Michael Lam, Ananthan Raghunathan, Fan Jiang, Germain Fenger, Kostas Adam, "Optical proximity correction for anamorphic extreme ultraviolet lithography," Journal of Micro/Nanolithography, MEMS, and MOEMS 16(4), 041004 (19 August 2017). https://doi.org/10.1117/1.JMM.16.4.041004 Submission: Received 15 May 2017; Accepted 24 July 2017
Submission: Received 15 May 2017; Accepted 24 July 2017


Semiconducting wafers

Optical proximity correction

Wafer-level optics

Finite-difference time-domain method

Extreme ultraviolet

Systems modeling

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