27 September 2017 Elucidating the patterning mechanism of zirconium-based hybrid photoresists
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J. of Micro/Nanolithography, MEMS, and MOEMS, 16(4), 041007 (2017). doi:10.1117/1.JMM.16.4.041007
Abstract
We report a series of studies aimed at shedding more light on the development mechanism of zirconium (Zr)-based extreme-UV hybrid photoresists. In earlier works, our group demonstrated that Zr-based hybrid resists are capable of resolving 30-nm half-pitch features with a very high sensitivity in the range of 1 to 20  mJ/cm2, which renders these materials potential candidates in the area of nonchemically amplified inorganic resists. While attractive because of its high sensitivity, Zr-methacrylic acid suffers from scumming problems. In an effort to better understand what controls sensitivity and scumming phenomena, we employed a combination of analytical techniques (electrospray ionization mass spectrometry, x-ray photoelectron spectroscopy, and Fourier transform infrared spectroscopy) to study the patterning mechanism in detail, to be able to optimize the development process and develop systems with optimal features.
© 2017 Society of Photo-Optical Instrumentation Engineers (SPIE)
Vasiliki Kosma, Kazuki Kasahara, Hong Xu, Jérémy Odent, Christopher K. Ober, Emmanuel P. Giannelis, "Elucidating the patterning mechanism of zirconium-based hybrid photoresists," Journal of Micro/Nanolithography, MEMS, and MOEMS 16(4), 041007 (27 September 2017). http://dx.doi.org/10.1117/1.JMM.16.4.041007 Submission: Received 27 May 2017; Accepted 31 August 2017
Submission: Received 27 May 2017; Accepted 31 August 2017
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KEYWORDS
Photoresist materials

Zirconium

Optical lithography

FT-IR spectroscopy

Metals

Extreme ultraviolet lithography

Oxides

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