27 September 2017 Elucidating the patterning mechanism of zirconium-based hybrid photoresists
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Abstract
We report a series of studies aimed at shedding more light on the development mechanism of zirconium (Zr)-based extreme-UV hybrid photoresists. In earlier works, our group demonstrated that Zr-based hybrid resists are capable of resolving 30-nm half-pitch features with a very high sensitivity in the range of 1 to 20  mJ/cm2, which renders these materials potential candidates in the area of nonchemically amplified inorganic resists. While attractive because of its high sensitivity, Zr-methacrylic acid suffers from scumming problems. In an effort to better understand what controls sensitivity and scumming phenomena, we employed a combination of analytical techniques (electrospray ionization mass spectrometry, x-ray photoelectron spectroscopy, and Fourier transform infrared spectroscopy) to study the patterning mechanism in detail, to be able to optimize the development process and develop systems with optimal features.
© 2017 Society of Photo-Optical Instrumentation Engineers (SPIE)
Vasiliki Kosma, Vasiliki Kosma, Kazuki Kasahara, Kazuki Kasahara, Hong Xu, Hong Xu, Jérémy Odent, Jérémy Odent, Christopher K. Ober, Christopher K. Ober, Emmanuel P. Giannelis, Emmanuel P. Giannelis, } "Elucidating the patterning mechanism of zirconium-based hybrid photoresists," Journal of Micro/Nanolithography, MEMS, and MOEMS 16(4), 041007 (27 September 2017). https://doi.org/10.1117/1.JMM.16.4.041007 . Submission: Received: 27 May 2017; Accepted: 31 August 2017
Received: 27 May 2017; Accepted: 31 August 2017; Published: 27 September 2017
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