31 July 2018 Inorganic hardmask development for extreme ultraviolet patterning
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Abstract
Extreme ultraviolet (EUV) patterning offers an opportunity to explore hardmask materials and patterning approaches. Traditional patterning stacks for deep ultraviolet patterning have been based on optimizing multilayer schemes for reflectivity control and pattern transfer. At the EUV wavelength, the patterning challenges are dominated by stochastics and aspect ratio control. This offers an opportunity to think differently about underlayer design for sub-36-nm pitch patterning. The choice of hardmask can be used to modulate postlitho defectivity to mitigate the stochastics effects and enable more efficient pattern transfer. Through different case studies this paper will explore a range of silicon-based inorganic hardmasks for sub-36-nm EUV patterning. How film properties dominate patterning performance will be studied systematically. The relative merits of patterning a chemically amplified organic resist directly on an inorganic hardmask or having different types of organic adhesion promoters as an intermediate layer will also be presented.
© 2018 Society of Photo-Optical Instrumentation Engineers (SPIE)
Anuja De Silva, Anuja De Silva, Ashim Dutta, Ashim Dutta, Luciana Meli, Luciana Meli, Yiping Yao, Yiping Yao, Yann Mignot, Yann Mignot, Jing Guo, Jing Guo, Nelson M. Felix, Nelson M. Felix, "Inorganic hardmask development for extreme ultraviolet patterning," Journal of Micro/Nanolithography, MEMS, and MOEMS 18(1), 011004 (31 July 2018). https://doi.org/10.1117/1.JMM.18.1.011004 . Submission: Received: 15 May 2018; Accepted: 28 June 2018
Received: 15 May 2018; Accepted: 28 June 2018; Published: 31 July 2018
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