5 September 2018 Defect detection strategies and process partitioning for single-expose EUV patterning
Author Affiliations +
Abstract
The key challenge for enablement of a second node of single-expose EUV patterning is understanding and mitigating the patterning-related defects that narrow the process window. Typical in-line inspection techniques, such as broadband plasma and e-beam systems, find it difficult to detect the main yield-detracting defects postdevelop, and thus understanding the effects of process improvement strategies has become more challenging. New techniques and methodologies for detection of EUV lithography defects, along with judicious process partitioning, are required to develop process solutions that improve yield. This paper will first discuss alternative techniques and methodologies for detection of lithography-related defects, such as scumming and microbridging. These strategies will then be used to gain a better understanding of the effects of material property changes, process partitioning, and hardware improvements, ultimately correlating them directly with electrical yield detractors.
© 2018 Society of Photo-Optical Instrumentation Engineers (SPIE)
Luciana Meli, Luciana Meli, Karen Petrillo, Karen Petrillo, Anuja De Silva, Anuja De Silva, John Arnold, John Arnold, Nelson Felix, Nelson Felix, Chris Robinson, Chris Robinson, Benjamin Briggs, Benjamin Briggs, Shravan Matham, Shravan Matham, Yann Mignot, Yann Mignot, Jeffrey Shearer, Jeffrey Shearer, Bassem Hamieh, Bassem Hamieh, Koichi Hontake, Koichi Hontake, Lior Huli, Lior Huli, Corey Lemley, Corey Lemley, Dave Hetzer, Dave Hetzer, Eric Liu, Eric Liu, Ko Akiteru, Ko Akiteru, Shinichiro Kawakami, Shinichiro Kawakami, Takeshi Shimoaoki, Takeshi Shimoaoki, Yusaku Hashimoto, Yusaku Hashimoto, Hiroshi Ichinomiya, Hiroshi Ichinomiya, Akiko Kai, Akiko Kai, Koichiro Tanaka, Koichiro Tanaka, Ankit Jain, Ankit Jain, Heungsoo Choi, Heungsoo Choi, Barry Saville, Barry Saville, Chet Lenox, Chet Lenox, "Defect detection strategies and process partitioning for single-expose EUV patterning," Journal of Micro/Nanolithography, MEMS, and MOEMS 18(1), 011006 (5 September 2018). https://doi.org/10.1117/1.JMM.18.1.011006 . Submission: Received: 18 May 2018; Accepted: 1 August 2018
Received: 18 May 2018; Accepted: 1 August 2018; Published: 5 September 2018
JOURNAL ARTICLE
9 PAGES


SHARE
Back to Top