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10 May 2019 Deep silicon etching for thermopile structures using a modified Bosch process
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Abstract
We present a simple method of deep anisotropic etching of silicon up to 400  μm with nearly vertical sidewall profile for thermopile devices. The method is based on the time-multiplexed etching which is a modified case of the Bosch deep reactive ion etching process. This process is mainly adjusted by chuck power and it is divided into three steps which are zero bias deposition step, high bias polymer removing step, and low bias silicon etching step. Compared with the standard Bosch process, this modified strategy shows advantage of etch rate and selectivity.
© 2019 Society of Photo-Optical Instrumentation Engineers (SPIE) 1932-5150/2019/$25.00 © 2019 SPIE
Na Zhou, Junjie Li, Henry Radamson, Lin Li, Qifeng Jiang, and Junfeng Li "Deep silicon etching for thermopile structures using a modified Bosch process," Journal of Micro/Nanolithography, MEMS, and MOEMS 18(2), 024501 (10 May 2019). https://doi.org/10.1117/1.JMM.18.2.024501
Received: 22 November 2018; Accepted: 22 April 2019; Published: 10 May 2019
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