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13 September 2019 Development of standard samples with programmed defects for evaluation of pattern inspection tools for 7-nm and smaller nodes
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Abstract

Background: Continued shrinkage of pattern size has caused difficulties in detecting small defects. Multibeam scanning electron microscopy (SEM) is a potential method for pattern inspection below 7-nm node. Performance of the tool depends on charge control, resolution, and defect detection capability.

Aim: The goal of this study is to develop a method for evaluating the performance of multibeam SEM for 7-nm nodes.

Approach: By developing various standard samples with programmed defects (PDs) on 12 in. Si wafer, we evaluate the performance of multibeam SEM.

Results: The first wafer had line and space (LS) patterns and PDs with varying contrast. A second wafer had various shaped small PDs, ∼5  nm in size in 16- to 12-nm half-pitch LS patterns. A third wafer with extremely small PDs of around 1 nm was fabricated in LS patterns with ultralow line-edge roughness (LER) of less than 1 nm. The first wafer was effective for charge control, whereas second and third wafer confirms resolution and defect detection capability.

Conclusions: A set of minimum three standard wafer samples is effective to confirm the performance of multibeam SEM for below 7-nm nodes. Besides, we proposed a method to verify the LER values measured by a critical-dimension SEM.

© 2019 Society of Photo-Optical Instrumentation Engineers (SPIE) 1932-5150/2019/$28.00 © 2019 SPIE
Susumu Iida, Takamitsu Nagai, and Takayuki Uchiyama "Development of standard samples with programmed defects for evaluation of pattern inspection tools for 7-nm and smaller nodes," Journal of Micro/Nanolithography, MEMS, and MOEMS 18(3), 033503 (13 September 2019). https://doi.org/10.1117/1.JMM.18.3.033503
Received: 14 April 2019; Accepted: 26 August 2019; Published: 13 September 2019
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