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18 December 2019 Self-aligned double patterning for active trim contacts with anisotropic pattern pitches in sub-20 nm dynamic random access memories
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Abstract

Background: With continuous decrease in the technology node of dynamic random access memories (DRAMs) down to sub-20 nm, the self-aligned double patterning (SADP) is an effective approach to generate two-dimensional (2-D) patterns, particularly contact arrays.

Aim: We demonstrate a patterning scheme using the SADP technique to produce active trim contacts with anisotropic pattern pitches.

Approach: The proposed scheme uses two consecutive spacer-formation processes.

Results: By making the ellipsoidal core pillars and minimizing the spacer thickness, 2-D critical dimensions (CDs) for self-generated contacts match well with those for core contacts. In addition, an interesting cross-dependence of X-CD and Y-CD variations for the core and self-generated contacts is observed.

Conclusion: This patterning approach is useful for forming active trim contacts in sub-20 nm DRAMs using fewer numbers of ArF immersion photolithography steps.

© 2019 Society of Photo-Optical Instrumentation Engineers (SPIE) 1932-5150/2019/$28.00 © 2019 SPIE
Kiseok Lee, Dongoh Kim, Chansic Yoon, Taejin Park, Sunghee Han, Yoosang Hwang, Kyupil Lee, Hokyu Kang, and Hyoungsub Kim "Self-aligned double patterning for active trim contacts with anisotropic pattern pitches in sub-20 nm dynamic random access memories," Journal of Micro/Nanolithography, MEMS, and MOEMS 18(4), 040501 (18 December 2019). https://doi.org/10.1117/1.JMM.18.4.040501
Received: 2 July 2019; Accepted: 26 November 2019; Published: 18 December 2019
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