1 January 2003 Performance of a high productivity 300 mm dual stage 193 nm 0.75 NA TWINSCAN AT:1100B system for 100 nm applications
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Abstract
To realize high productivity at the 100-nm node, ASML developed the TWINSCANTM AT:1100B. This dual-stage 193-nm lithography system combines high throughput TWINSCANTM technology for 300-mm wafers, excellent dynamical performance, and low-aberration 0.75-NA StarlithTM 1100 projection optics. The system is equipped with a 20-W 4-kHz ArF laser and the AERIALTM II illuminator, enabling high intensity off-axis and multipole QUASARTM illumination. Important process control requirements for the 100-nm technology node are CD variation across the chip and across the wafer. Full wafer leveling, including dies on the edge of the wafer, and CD uniformity performance on 300-mm wafers with and without topology are presented, showing full wafer CD uniformity numbers as low as 6.3 nm 3σ for 100-nm isolated lines with assisting features. Imaging performance of dense, fully isolated lines plus dense and isolated contact holes is shown. Also, printing of critical customer structures is discussed. With these results it is demonstrated that the TWINSCANTM AT:1100B 300-mm ArF Step & Scan system meets the requirements for the 100-nm node.
Rian Rubingh, Youri van Dommelen, Sjef Tempelaars, Marc Boonman, Roger Irwin, Edwin van Donkelaar, Hans Burgers, Guustaaf Savenije, Bert Koek, Michael Thier, Oliver Roempp, Christian Hembd-Soellner, "Performance of a high productivity 300 mm dual stage 193 nm 0.75 NA TWINSCAN AT:1100B system for 100 nm applications," Journal of Micro/Nanolithography, MEMS, and MOEMS 2(1), (1 January 2003). http://dx.doi.org/10.1117/1.1531190
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KEYWORDS
Semiconducting wafers

Scanning electron microscopy

Critical dimension metrology

Reticles

Lithography

Monochromatic aberrations

Metrology

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