1 April 2003 Compact electron-based extreme ultraviolet source at 13.5 nm
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Abstract
Generation of extreme ultraviolet (EUV) radiation from solid targets is studied and a compact EUV source for small-scale lithographic applications and EUV metrology is developed. This source is based on a transfer of conventional x-ray tube technology into the EUV spectral range. As in an ordinary x-ray tube, electrons are generated by a tungsten filament and accelerated in a high-voltage electric field toward a solid target. In the demonstrated "EUV tube" beryllium and silicon targets are used to generate radiation at 11.4 and 13.5 nm, respectively. The absolute conversion efficiencies into EUV photons at 13.5 nm are measured. Prospects for a further power scaling of the EUV source are discussed.
Andre Egbert, Bjoern Mader, Boris Tkachenko, Andreas Ostendorf, Carsten Fallnich, Boris N. Chichkov, Thomas Miflalla, Max Christian Schuermann, Kai Gaebel, Guido Schriever, Uwe Stamm, "Compact electron-based extreme ultraviolet source at 13.5 nm," Journal of Micro/Nanolithography, MEMS, and MOEMS 2(2), (1 April 2003). http://dx.doi.org/10.1117/1.1532350
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KEYWORDS
Extreme ultraviolet

Electrons

Silicon

Solids

Beryllium

Photons

Metrology

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