1 April 2003 Contrast analysis and optimization for resolution enhancement technique
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We propose a framework for the analysis and characterization of the efficacy of any resolution enhancement technique (RET) in lithography. The method is based on extracting a distribution of the image log slope (ILS) for a given layout under a predefined set of optical conditions. This distribution is then taken as the optical signature for the image local contrast of the design. The optical signature can be created for an entire layout, or only for certain cells believed to be problematic. Comparisons can be made between the optical signatures generated using different illumination/RET strategies. We have used this method to evaluate and optimize two different RET approaches: subresolution assist features (SRAF) and double-exposure dipole illumination.
© (2003) Society of Photo-Optical Instrumentation Engineers (SPIE)
Juan Andres Torres, Yuri Granik, Franklin M. Schellenberg, "Contrast analysis and optimization for resolution enhancement technique," Journal of Micro/Nanolithography, MEMS, and MOEMS 2(2), (1 April 2003). https://doi.org/10.1117/1.1562931 . Submission:


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