1 April 2003 Simulation model of in-plane distortion in extreme ultraviolet lithography mask during chucking without friction
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Abstract
In-plane displacement (IPD) of an extreme ultraviolet lithography (EUVL) mask in a flat state during the electrostatic chucking stage without friction is examined through simulations. For predicting IPD of an EUVL mask, a simulation model based on two-dimensional plane stress theory is developed. With regard to the absorber patterns both square and rectangle, film stress and absorber coverage dependency of IPD is investigated. Mitigation of IPD to the 1-nm level is possible by reducing absorber stress to ∓100 MPa. The change in surface height caused by absorber film stress of ∓500 MPa is less than 1 nm. The influence of change in surface height on image placement shift was found to be negligible because the image placement shift is 0.03 nm.
Akira Chiba, Eiichi Hoshino, Minoru Sugawara, Hiromasa Yamanashi, Kazuya Ota, Taro Ogawa, Shinji Okazaki, "Simulation model of in-plane distortion in extreme ultraviolet lithography mask during chucking without friction," Journal of Micro/Nanolithography, MEMS, and MOEMS 2(2), (1 April 2003). https://doi.org/10.1117/1.1563645
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