1 July 2003 Comparison of extreme ultraviolet reflectance measurements
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Abstract
The semiconductor industry has pushed linewidths on integrated-circuit chips down to 100 nm. To pattern ever finer lines by use of photolithography, the industry is now preparing the transition to extreme ultraviolet lithography (EUVL) at 13 nm by 2007. As EUVL matures, the requirements for the accuracy of reflectivity and wavelength measurements are becoming tighter. A high absolute accuracy and worldwide traceability of reflectance measurements are mandatory for worldwide system development. A direct comparison of EUV reflectance measurements at the Advanced Light Source (ALS) Center for X-Ray Optics (CXRO) and Physikalisch-Technische Bundesanstalt (PTB) yield perfect agreement within the mutual relative uncertainties of 0.14% for reflectance and 0.014% for wavelength.
© (2003) Society of Photo-Optical Instrumentation Engineers (SPIE)
Frank Scholze, Frank Scholze, Johannes F. Tümmler, Johannes F. Tümmler, Eric M. Gullikson, Eric M. Gullikson, Andy Aquila, Andy Aquila, } "Comparison of extreme ultraviolet reflectance measurements," Journal of Micro/Nanolithography, MEMS, and MOEMS 2(3), (1 July 2003). https://doi.org/10.1117/1.1583735 . Submission:
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