1 July 2003 Comparison of extreme ultraviolet reflectance measurements
Author Affiliations +
Abstract
The semiconductor industry has pushed linewidths on integrated-circuit chips down to 100 nm. To pattern ever finer lines by use of photolithography, the industry is now preparing the transition to extreme ultraviolet lithography (EUVL) at 13 nm by 2007. As EUVL matures, the requirements for the accuracy of reflectivity and wavelength measurements are becoming tighter. A high absolute accuracy and worldwide traceability of reflectance measurements are mandatory for worldwide system development. A direct comparison of EUV reflectance measurements at the Advanced Light Source (ALS) Center for X-Ray Optics (CXRO) and Physikalisch-Technische Bundesanstalt (PTB) yield perfect agreement within the mutual relative uncertainties of 0.14% for reflectance and 0.014% for wavelength.
Frank Scholze, Johannes F. Tümmler, Eric M. Gullikson, Andy Aquila, "Comparison of extreme ultraviolet reflectance measurements," Journal of Micro/Nanolithography, MEMS, and MOEMS 2(3), (1 July 2003). https://doi.org/10.1117/1.1583735
JOURNAL ARTICLE
3 PAGES


SHARE
Back to Top