Translator Disclaimer
1 July 2003 Cr photomask etch
Author Affiliations +
Abstract
Theoretical and experimental Cr photomask etch studies are carried out using different resists [ZEP, chemically amplified resists (CAR), and optical resists] and different brand etch tools. The effects of chrome loading are analyzed, and theoretical equations are developed for etch time calculations and endpoint determinations of extremely low Cr load photomasks. It was found that these equations agreed well with experimental data. Etch critical dimension (CD) movement data are analyzed and calculated, showing agreement with experimental data. Metrology measurement and characterization tools include a profilometer, an optical film measurement system, and SEM and optical CD measurement systems. Significant etch performance differences are noted across etch tools, irrespective of the resist type used. An etch property number method is proposed, which is found to accurately describe the etch process analysis and the extent to which etch performance can be expected to be improved. Etch properties are focused on etch CD movement, isolated/dense etch CD bias, radial CD etch contribution, and Cr load effects.
©(2003) Society of Photo-Optical Instrumentation Engineers (SPIE)
Banqiu Wu and David Y. Chan "Cr photomask etch," Journal of Micro/Nanolithography, MEMS, and MOEMS 2(3), (1 July 2003). https://doi.org/10.1117/1.1580828
Published: 1 July 2003
JOURNAL ARTICLE
10 PAGES


SHARE
Advertisement
Advertisement
RELATED CONTENT

Improvement of chrome CDU by optimizing focus ring design
Proceedings of SPIE (August 28 2003)
Cr photomask etch performance and its modeling
Proceedings of SPIE (December 27 2002)
Investigation of Cr etch kinetics
Proceedings of SPIE (December 17 2003)
Cr and MoSi photomask plasma etching
Proceedings of SPIE (June 02 2003)

Back to Top