Developing a viable multilayer coating process for extreme ultraviolet lithography reticles

Paul B. Mirkarimi; Eberhard Adolf Spiller; Sherry L. Baker; Victor R. Sperry; Daniel Gorman Stearns; Eric M. Gullikson

doi:10.1117/1.1631006

1 January 2004 Developing a viable multilayer coating process for extreme ultraviolet lithography reticles

Paul B. Mirkarimi, Eberhard Adolf Spiller, Sherry L. Baker, Victor R. Sperry, Daniel Gorman Stearns, Eric M. Gullikson

Author Affiliations +

J. of Micro/Nanolithography, MEMS, and MOEMS, 3(1), (2004). https://doi.org/10.1117/1.1631006

Abstract

Reticle blanks for extreme ultraviolet lithography (EUVL) are fabricated by depositing reflective Mo/Si multilayer films on superpolished substrates. To obtain a reasonable cost of ownership for EUVL, the multilayer films must be nearly defect free, have excellent reflectance/thickness uniformity, and have a high EUV reflectance. Small particle contaminants on the substrate that can nucleate printable Mo/Si phase defects are a serious concern. We develop an ion-beam thin film planarization process for mitigating the effect of small substrate contaminants that relies on enhancing the smoothing capability of Mo/Si multilayer films; we observe that etching of the Si layers in between deposition steps can yield a significant improvement in smoothing. Using this process substrate particles as large as ~50 nm in diameter are smoothed to ~1 nm in height, rendering them harmless. We further develop this process so that it retains these particle-smoothing capabilities while also achieving a high EUV reflectance and excellent uniformity.

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Paul B. Mirkarimi, Paul B. Mirkarimi, Eberhard Adolf Spiller, Eberhard Adolf Spiller, Sherry L. Baker, Sherry L. Baker, Victor R. Sperry, Victor R. Sperry, Daniel Gorman Stearns, Daniel Gorman Stearns, Eric M. Gullikson, Eric M. Gullikson, } "Developing a viable multilayer coating process for extreme ultraviolet lithography reticles," Journal of Micro/Nanolithography, MEMS, and MOEMS 3(1), (1 January 2004). https://doi.org/10.1117/1.1631006 . Submission:

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