1 April 2004 Mask error tensor and causality of mask error enhancement for low-k1 imaging: theory and experiments
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Abstract
Three important concepts about the mask error enhancement factor (MEEF) are proposed. From the definition of MEEF, it could be derived as a function of the image log slope and the aerial image variation caused by mask critical dimension (CD) errors. Second, a mask error common window indicator (MECWIN) is proposed to evaluate the MEEF and mask CD specification by knowing the wafer CD tolerance. This concept is used to define the mask CD specification without any ambiguity. Finally, we describe the complex 2-D response to the mask-making error around the line end by a mask error enhancement tensor. Both theoretical derivations and experiments to justify the theory are presented.
Chun-Kuang Chen, Tsai-Sheng Gau, Jaw-Jung Shin, Ru-Gun Liu, Shinn-Sheng Yu, Anthony Yen, Burn-Jeng Lin, "Mask error tensor and causality of mask error enhancement for low-k1 imaging: theory and experiments," Journal of Micro/Nanolithography, MEMS, and MOEMS 3(2), (1 April 2004). http://dx.doi.org/10.1117/1.1669508
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KEYWORDS
Photomasks

Critical dimension metrology

Semiconducting wafers

Tolerancing

Diffraction

Error analysis

Scanners

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