1 April 2004 Photomask dimensional metrology in the scanning electron microscope, part II: High-pressure/environmental scanning electron microscope
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Abstract
Binary and phase-shifting chromium on quartz optical photomasks have been successfully investigated with high-pressure/environmental scanning electron microscopy (SEM). The successful application of this methodology to semiconductor photomask metrology is new because of the recent availability of high-pressure SEM instrumentation equipped with high-resolution, high-signal, field emission technology in conjunction with large chamber and sample transfer capabilities. The high-pressure SEM methodology employs a gaseous environment to help diminish the charge buildup that occurs under irradiation with the electron beam. Although very desirable for charge reduction, this methodology has not been employed in production photomask or wafer metrology until now. This is a new application of this technology to this area, and it shows great promise in the inspection, imaging and metrology of photomasks in a charge-free operational mode. This methodology also holds the potential of similar implications for wafer metrology. For accurate metrology, high-pressure SEM methodology also affords a path that minimizes, if not eliminates, the need for charge modeling. This paper presents some new results in high-pressure SEM metrology of photomasks.
Michael T. Postek, András E. Vladár, Marylyn Hoy Bennett, Trisha M. Rice, Ralph Knowles, "Photomask dimensional metrology in the scanning electron microscope, part II: High-pressure/environmental scanning electron microscope," Journal of Micro/Nanolithography, MEMS, and MOEMS 3(2), (1 April 2004). http://dx.doi.org/10.1117/1.1668272
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KEYWORDS
Scanning electron microscopy

Photomasks

Metrology

Electron beams

Contamination

Dimensional metrology

Electron microscopes

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