1 April 2004 Stereolithographic patterning of diazonaphthoquinone/novolac photoresist
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Abstract
A fabrication process has been developed which prevents solvent intermixing between layers of diazonaphthoquinone/novolac (DNQ/novolac) based resist. The process enables three-dimensional structures to be batch fabricated stereolithographically using integrated circuit-compatible resist, coating, and exposure techniques, followed by a single development step. To prevent solvent intermixing, a combination of solvent tailoring and surface treatment is employed. The photoresist is first constituted into a weaker, less polar solvent. Before coating a new layer, the surface is exposed to ozone, thus increasing the hydrophilicity of the surface and providing a less soluble barrier layer. This enables the formation of a stack of successively photoimaged layers of the same material, which are then developed in a single step. A new interlayer dose modulation technique to optimize the development process in positive tone resists such as DNQ/novolac is also described.
Theodore M. Bloomstein, Stephen T. Palmacci, Roderick R. Kunz, Mordechai Rothschild, "Stereolithographic patterning of diazonaphthoquinone/novolac photoresist," Journal of Micro/Nanolithography, MEMS, and MOEMS 3(2), (1 April 2004). http://dx.doi.org/10.1117/1.1668270
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KEYWORDS
Photoresist materials

Ozone

Picture Archiving and Communication System

Photoresist developing

Optical lithography

Coating

Modulation

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