1 October 2004 Fabrication of a novel vacuum microelectronic pressure sensor
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Abstract
By combining silicon dry corrosion, wet corrosion, oxidizing sharpening and vacuum bonding techniques, and the theoretic calculation of elastic membranes and the distance from the catelectrode to the anode, a novel vacuum microelectronic pressure senor with overload protection is developed. The density of the field emission catelectrode array is about 24,000/mm2. The starting emission voltage is 0.5 to 1.5 V; backward voltage is higher than 25 V. When the forward voltage is 5 V, pressure sensitivity is 30.1 mV/kPa. The temperature error is 0.5% between 20 and 122°C.
Zhi-yu Wen, Zhongquan Wen, Gang Chen, Xiaolan Wang, "Fabrication of a novel vacuum microelectronic pressure sensor," Journal of Micro/Nanolithography, MEMS, and MOEMS 3(4), (1 October 2004). http://dx.doi.org/10.1117/1.1792651
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KEYWORDS
Sensors

Microelectronics

Silicon

Corrosion

Anisotropy

Resistance

Electronics

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