1 January 2005 Overbake and resist formulation: improved depth of focus and small line printing
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We previously [Van Steenwinckel and Lammers, Proc. SPIE 5039, 225-239 (2003)] showed that resist effects induced by "overbaking" (enhanced processing) can lead to major improvements in depth of focus and small-line printing capability through improved acid dose contrasts and a balanced optimization of acid diffusion in the presence of quencher. We show how a similar optimization can be attained by changes in resist formulation and how these changes can have a comparable positive impact on ultimate resolution and depth of focus. The formulation changes that are discussed follow the guidelines of the compact resist model that accounts for the overbake performance. The impact of the proposed resist reformulation on line-end shortening, line-edge roughness, and post exposure bake (PEB) sensitivity is discussed as well. The outcome of this work can be used to define which changes to the resist formulation offer the most beneficial improvements in the overall lithography process for printing resist features of 65 nm and smaller using ArF lithography and binary masks.
© (2005) Society of Photo-Optical Instrumentation Engineers (SPIE)
David Van Steenwinckel, David Van Steenwinckel, Makoto Shimizu, Makoto Shimizu, Jeroen H. Lammers, Jeroen H. Lammers, } "Overbake and resist formulation: improved depth of focus and small line printing," Journal of Micro/Nanolithography, MEMS, and MOEMS 4(1), 013005 (1 January 2005). https://doi.org/10.1117/1.1858491 . Submission:

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