1 April 2005 Low energy electron beam proximity projection lithography
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J. of Micro/Nanolithography, MEMS, and MOEMS, 4(2), 023008 (2005). doi:10.1117/1.1898063
Abstract
The low energy electron beam proximity projection lithography (LEEPL) system consists of three properties: low energy electron beam, a parallel beam, and proximity projection. The low energy electrons increase the effective resist sensitivity and greatly minimize the proximity effect. Over a 20 µm depth of focus is achieved by the parallel beam on the proximity projection. The subdeflection system of the LEEPL system is useful in correcting the mask distortion and chip distortion on the wafer by a correction data map corresponding to the field, because of the space (>30 µm) between the wafer and the mask. The overlay accuracy of the machine itself is less than 14 nm and that of mix and match is less than 25 nm. This implies that the overlay between the LEEPL system and an ArF scanner in both the x and y directions are obtained. This machine shows the 48 nm Φ CH resist patterns as the ultimate resolution. The cost of ownership (CoO) of the LEEPL system for a 65 nm node device will be approximately less than $25/wafer/layer and the value is lower than that of an ArF scanner.
Norihiko Samoto, Akira Yoshida, Hideaki Takano, Akihiro Endo, Toyoji Fukui, "Low energy electron beam proximity projection lithography," Journal of Micro/Nanolithography, MEMS, and MOEMS 4(2), 023008 (1 April 2005). http://dx.doi.org/10.1117/1.1898063
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KEYWORDS
Photomasks

Semiconducting wafers

Charged-particle lithography

Electron beams

Optical alignment

Distortion

Electron beam lithography

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