1 April 2005 New resists for nanometer scale patterning by extreme ultraviolet lithography
Author Affiliations +
J. of Micro/Nanolithography, MEMS, and MOEMS, 4(2), 029701 (2005). doi:10.1117/1.1898604
Abstract
The goal of nanofabrication capabilities that can routinely achieve dimensions of less than 32 nm will require the design of new photopolymers and strategies using wavelengths as short as 13 nm [extreme ultraviolet (EUV)]. Although EUV lithography is a challenging emerging technology that has proven its feasibility to smaller image features, yet it still requires novel photoresists. This communication discusses developments in the synthesis and lithographic performance of positive chemically amplified photoresists incorporating hydroxystyrene and a bulky adamantly protecting group. The incorporation of an ionic PAG unit, phenyl methacrylate dimethysulfonium triflate (PAG), in the resist backbone showed increased sensitivity compared with the analogous blend PAG resist samples. Sub-50 nm patterns were obtained upon extreme UV exposure on ultrathin single layer resist films of the newly synthesized polymer bound PAG resist, poly (4-hydroxystyrene-co-2-ethyl-2-adamantyl methacrylate-co-PAG).
Kenneth Emmanuel Gonsalves, Muthiah Thiyagarajan, Kim R. Dean, "New resists for nanometer scale patterning by extreme ultraviolet lithography," Journal of Micro/Nanolithography, MEMS, and MOEMS 4(2), 029701 (1 April 2005). http://dx.doi.org/10.1117/1.1898604
JOURNAL ARTICLE
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KEYWORDS
Polymers

Extreme ultraviolet lithography

Lithography

Optical lithography

Extreme ultraviolet

Photoresist materials

Photomicroscopy

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