1 July 2005 Design and fabrication of a miniaturized bulk acoustic filter by high aspect ratio etching
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J. of Micro/Nanolithography, MEMS, and MOEMS, 4(3), 033010 (2005). doi:10.1117/1.2037387
Abstract
A 2.45-GHz filter is fabricated by thin film bulk acoustic wave resonator (FBAR) technology. It is designed to minimize die size and simplify the fabrication process simultaneously by using inductive coupling plasma etching. The quality factor of a fabricated single resonator is 1567 and the electromechanical coupling coefficient is 5.7%. The fabricated filter has minimum insertion loss around 1.5 dB and maximum insertion loss at 3.6 dB in 83.5-MHz bandwidth, which is suitable for WLAN and Bluetooth applications.
Chung-Hsien Lin, Hong-Ren Chen, Weileun Fang, "Design and fabrication of a miniaturized bulk acoustic filter by high aspect ratio etching," Journal of Micro/Nanolithography, MEMS, and MOEMS 4(3), 033010 (1 July 2005). http://dx.doi.org/10.1117/1.2037387
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KEYWORDS
Resonators

Acoustics

Electrodes

Etching

Aluminum nitride

Electromechanical design

Silicon

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