1 October 2005 Thin-film optimization strategy in high numerical aperture optical lithography, part 1: principles
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Abstract
The functional dependence of a resist critical dimension (CD) with respect to resist thickness for a general absorptive thin-film stack in the case of oblique incidence is derived analytically with the rigorous electromagnetic theory. Based on obtained results, we discuss those thin-film effects related to CD control, such as the swing effect, bulk effect, etc., especially in the regime of high numerical aperture optical lithography.
© (2005) Society of Photo-Optical Instrumentation Engineers (SPIE)
Shinn-Sheng Yu, Shinn-Sheng Yu, Burn Lin, Burn Lin, Anthony Yen, Anthony Yen, Chih-Ming Ke, Chih-Ming Ke, Te-Chih Huang, Te-Chih Huang, Bang-Chein Ho, Bang-Chein Ho, Chun-Kuang Chen, Chun-Kuang Chen, Tsai-Sheng Gau, Tsai-Sheng Gau, Hung-Chang Hsieh, Hung-Chang Hsieh, Yao-Ching Ku, Yao-Ching Ku, } "Thin-film optimization strategy in high numerical aperture optical lithography, part 1: principles," Journal of Micro/Nanolithography, MEMS, and MOEMS 4(4), 043003 (1 October 2005). https://doi.org/10.1117/1.2137967 . Submission:
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