1 October 2005 High-performance microfabricated angular rate sensor
Author Affiliations +
J. of Micro/Nanolithography, MEMS, and MOEMS, 4(4), 043006 (2005). doi:10.1117/1.2114787
Abstract
The development of a miniature angular rate sensor based on silicon-on-insulator (SOI) microfabrication technology is presented. The design, fabrication, integration, and inertial testing of a MEMS-based angular rate sensor with large dynamic range were the driving forces behind this research. The design goals of 10-deg/h bias stability while operating through 2000-deg/s roll environments are presented. The sensor design is based on a straightforward single-mask fabrication approach that utilizes deep reactive ion etching of a 100-µm-thick device layer, with a buried 2- to 3-µm oxide layer used as the sacrificial layer, in an SOI substrate. To date, the data show demonstrated bias drift performance of 60 deg/h over this fast-roll environment.
Tracy Dean Hudson, Sherrie W. Holt, Paul B. Ruffin, Michael S. Kranz, James W. McKee, Michael R. Whitley, Milan Buncick, Eric Tuck, "High-performance microfabricated angular rate sensor," Journal of Micro/Nanolithography, MEMS, and MOEMS 4(4), 043006 (1 October 2005). http://dx.doi.org/10.1117/1.2114787
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KEYWORDS
Gyroscopes

Sensors

Microelectromechanical systems

Microfabrication

Semiconducting wafers

Packaging

Calibration

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