1 January 2006 Direct, parallel nanopatterning of silicon carbide by laser nanosphere lithography
Author Affiliations +
J. of Micro/Nanolithography, MEMS, and MOEMS, 5(1), 011009 (2006). doi:10.1117/1.2177288
A technique to create nanopatterns on hard-to-machine bulk silicon carbide (SiC) with a laser beam is presented. A monolayer of silica (SiO2) spheres of 1.76-µm and 640-nm diameter are deposited on the SiC substrate and then irradiated with an Nd:YAG laser of 355 and 532 nm. The principle of optical near-field enhancement between the spheres and substrate when irradiated by a laser beam is used for obtaining the nanofeatures. The features are then characterized using a scanning electron microscope and an atomic force microscope. The diameter of the features thus obtained is around 150 to 450 nm and the depths vary from 70 to 220 nm.
Arvind Battula, Senthil Prakash Theppakuttai, Shaochen Chen, "Direct, parallel nanopatterning of silicon carbide by laser nanosphere lithography," Journal of Micro/Nanolithography, MEMS, and MOEMS 5(1), 011009 (1 January 2006). https://doi.org/10.1117/1.2177288

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