1 January 2006 Direct, parallel nanopatterning of silicon carbide by laser nanosphere lithography
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A technique to create nanopatterns on hard-to-machine bulk silicon carbide (SiC) with a laser beam is presented. A monolayer of silica (SiO2) spheres of 1.76-µm and 640-nm diameter are deposited on the SiC substrate and then irradiated with an Nd:YAG laser of 355 and 532 nm. The principle of optical near-field enhancement between the spheres and substrate when irradiated by a laser beam is used for obtaining the nanofeatures. The features are then characterized using a scanning electron microscope and an atomic force microscope. The diameter of the features thus obtained is around 150 to 450 nm and the depths vary from 70 to 220 nm.
© (2006) Society of Photo-Optical Instrumentation Engineers (SPIE)
Arvind Battula, Arvind Battula, Senthil Prakash Theppakuttai, Senthil Prakash Theppakuttai, Shaochen Chen, Shaochen Chen, } "Direct, parallel nanopatterning of silicon carbide by laser nanosphere lithography," Journal of Micro/Nanolithography, MEMS, and MOEMS 5(1), 011009 (1 January 2006). https://doi.org/10.1117/1.2177288 . Submission:

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