1 January 2006 Exploration of the ultimate patterning potential of focused ion beams
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We aim to explore the nanostructuring potential of a highly focused pencil of ions. We show that focused ion beam technology (FIB) is capable of overcoming some basic limitations of current nanofabrication techniques and allowing innovative patterning schemes for nanoscience. In this work, we first detail the very high resolution FIB instrument developed specifically to meet nanofabrication requirements. Then we introduce and illustrate some new patterning schemes for next-generation FIB processing. These patterning schemes are: 1. nanoengraving of membranes as a template for nanopores and nanomask fabrication; 2. local defect injection for magnetic thin film direct patterning; 3. function of graphite substrates to prepare 2-D organized arrays of clusters; and 5. selective epitaxy of III-V semiconductors on FIB patterned surfaces. Finally, we show that FIB patterning allows "bottom-up" or "organization" processes.
Jacques Giérak, Eric Bourhis, A. Madouri, Martin Strassner, Isabelle Sagnes, Sophie Bouchoule, M. N. Merat Combes, D. Mailly, Peter W. Hawkes, Ralf Jede, L. Bardotti, Brigitte Prevel, A. Hannour, P. Melinon, Annie Perez, Jacques Ferre, J. P. Jamet, A. Mougin, Claude Chappert, V. Mathet, "Exploration of the ultimate patterning potential of focused ion beams," Journal of Micro/Nanolithography, MEMS, and MOEMS 5(1), 011011 (1 January 2006). https://doi.org/10.1117/1.2181581

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