1 January 2006 Evaluation of the multistep generated wafer alignment mark to overcome chemical mechanical polishing problems
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J. of Micro/Nanolithography, MEMS, and MOEMS, 5(1), 013006 (2006). doi:10.1117/1.2168461
Abstract
We develop a new method to improve alignment accuracy. Specially designed two-step wafer alignment marks are evaluated for laser scan alignment to enhance wafer alignment. Wafer alignment accuracy data shows that it is enough to execute wafer alignment without failures in spite of the coarse chemical mechanical polishing (CMP) process. Effective detection of a wafer alignment mark leads to enhancement of product quality and could reduce the process time of the lithography step. It is a useful technique for thick metalization films and the planarity of high topography. A coarse metrology wafer with a CMP process can degrade the wafer alignment process. We try deep trench profiles and the clear structures of modified marks using additional photomask processing.
SangMan Bae, Moon-Hee Lee, "Evaluation of the multistep generated wafer alignment mark to overcome chemical mechanical polishing problems," Journal of Micro/Nanolithography, MEMS, and MOEMS 5(1), 013006 (1 January 2006). http://dx.doi.org/10.1117/1.2168461
JOURNAL ARTICLE
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KEYWORDS
Optical alignment

Semiconducting wafers

Chemical mechanical planarization

Signal detection

Signal processing

Lithography

Photomasks

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