1 April 2006 Progress in the fabrication of low-defect density mask blanks for extreme ultraviolet lithography
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Abstract
Extreme ultraviolet lithography (EUVL) is the leading next-generation lithography (NGL) technology to succeed optical lithography at the 32-nm node and beyond. The technology uses a multilayer-based reflective optical system, and the development of suitable, defect-free mask blanks is the greatest challenge facing the commercialization of EUVL. We describe recent progress toward the development of a commercial tool and process for the production of EUVL mask blanks. Using the resources at Mask Blank Development Center at SEMATECH-North in Albany, New York, we are able to decrease the mean multilayer-coating-added defect density on 6-in. square quartz substrates by almost an order of magnitude, from ~0.5 defects/cm2 to ~0.055 defects/cm2 for particles ≥80 nm in size (polystyrene latex equivalent). We also obtain a "champion" mask blank with an added defect density of only ~0.005 defects/cm2. This advance is due primarily to a compositional analysis of the particles using focused ion beam and energy dispersive analysis of x-rays (EDX) followed by tool and procedural upgrades based on best engineering practices and judgment. Another important specification for masks blanks is the coating uniformity, and we have simultaneously achieved a centroid wavelength uniformity of 0.4% and a coating-added defect density of 0.06 def/cm2.
© (2006) Society of Photo-Optical Instrumentation Engineers (SPIE)
Rajul V. Randive, Rajul V. Randive, Andy Ma, Andy Ma, Patrick A. Kearney, Patrick A. Kearney, David Krick, David Krick, Ira Reiss, Ira Reiss, Paul B. Mirkarimi, Paul B. Mirkarimi, Eberhard Adolf Spiller, Eberhard Adolf Spiller, } "Progress in the fabrication of low-defect density mask blanks for extreme ultraviolet lithography," Journal of Micro/Nanolithography, MEMS, and MOEMS 5(2), 023003 (1 April 2006). https://doi.org/10.1117/1.2198853 . Submission:
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