1 April 2006 Application of polysilazane to etch mask in pattern transfer processes for deep and vacuum ultraviolet lithography
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J. of Micro/Nanolithography, MEMS, and MOEMS, 5(2), 023007 (2006). doi:10.1117/1.2198841
Abstract
A polysilazane is investigated for a spin-on glass (SOG) used for a middle layer in a trilevel resist system. Higher film density is required for the middle layer to obtain higher etch resistance during the underlayer etching. The compositions of the polysilazane baked at 200°C and 300°C are Si0.42O0.34C0.40N0.20 and Si0.29O0.65C0.10N0.05, respectively, which are determined by x-ray photoelectron spectroscopy. The polysilazane is converted to silicon-oxide-like compositions by baking at 300°C. The film density and etch rate of SOG made from polysilazane are compared with that of polysiloxsane on condition that both films are baked at 300°C. The film density of the SOG made from the polysilazane is 2.07 g/cm3, which is higher than 1.87 g/cm3 of the conventional SOG made from a polysiloxsan. The etch resistance of the SOG made from the polysilazane is improved by 90% compared with that of the SOG made from the polysiloxsane due to the increased film density.
Yasuhiko Sato, Junko Abe, "Application of polysilazane to etch mask in pattern transfer processes for deep and vacuum ultraviolet lithography," Journal of Micro/Nanolithography, MEMS, and MOEMS 5(2), 023007 (1 April 2006). https://doi.org/10.1117/1.2198841
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