1 July 2006 Evaluation of 193-nm immersion resist without topcoat
Author Affiliations +
J. of Micro/Nanolithography, MEMS, and MOEMS, 5(3), 033002 (2006). doi:10.1117/1.2358128
Abstract
A production-preferred solution is 193-nm immersion resist without a topcoat. The challenge of 193-nm immersion resist is both low leaching level and high performance. We summarize the screening results of selected 193-nm immersion resists that are designed for use without top coatings. Our evaluation is divided into several phases. Leaching levels of resist samples are first tested. The leaching data are analyzed and compared to our specifications. Both binary intensity mask and alternating phase-shift mask exposures are performed to evaluate the process window, lineedge roughness, and resist pattern profile. Resist films are rinsed by deionized (DI) water prior to or after exposure, and contrast curves are measured to investigate the resist sensitivity change. The results are compared with resist systems that use developer-soluble topcoats.
Yayi Wei, Nickolay Stepanenko, Antje Laessig, Lars Voelkel, Michael Sebald, "Evaluation of 193-nm immersion resist without topcoat," Journal of Micro/Nanolithography, MEMS, and MOEMS 5(3), 033002 (1 July 2006). http://dx.doi.org/10.1117/1.2358128
JOURNAL ARTICLE
8 PAGES


SHARE
KEYWORDS
Semiconducting wafers

Photoresist processing

Contamination

Photomasks

Line edge roughness

Lithography

Scanners

RELATED CONTENT

High-order neural networks for image recognition
Proceedings of SPIE (August 11 1995)
Approach of arbitrary clipping in volume rendering
Proceedings of SPIE (January 04 2006)
Multilevel volumetric optical storage
Proceedings of SPIE (October 12 1994)

Back to Top