1 July 2006 Spectral analysis of line width roughness and its application to immersion lithography
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J. of Micro/Nanolithography, MEMS, and MOEMS, 5(3), 033003 (2006). doi:10.1117/1.2242982
Abstract
Various approaches can be used to quantify line width roughness (LWR). One of the most commonly used estimators of LWR is standard deviation σ. However, a substantial amount of information is ignored if only σ is measured. We use an automated approach to investigate LWR, where standard deviation, correlation length, and power spectrum are measured online on critical dimension scanning electron microscopes. This methodology is used to monitor LWR, investigate the effect of LWR on critical dimension precision, and to benchmark new resists for immersion lithography. Our results indicate that online LWR metrology is a critical tool in a variety of applications, including but not restricted to process control.
Gian F. Lorusso, Leonardus Hendrikus Albertino Leunissen, Monique Ercken, Christie Delvaux, Frieda Van Roey, Nadia Vandenbroeck, H. Yang, Amir R. Azordegan, Tony DiBiase, "Spectral analysis of line width roughness and its application to immersion lithography," Journal of Micro/Nanolithography, MEMS, and MOEMS 5(3), 033003 (1 July 2006). http://dx.doi.org/10.1117/1.2242982
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KEYWORDS
Line width roughness

Critical dimension metrology

Metrology

Immersion lithography

Process control

Etching

Semiconducting wafers

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