1 October 2006 Fast pixel-based mask optimization for inverse lithography
Author Affiliations +
Abstract
The direct problem of optical microlithography is to simulate printing features on the wafer under the given mask, imaging system, and process characteristics. The goal of inverse problems is to find the best mask, imaging system, or process to print the given wafer features. In this study, we proposed the strict formalization and fast solution methods of inverse mask problems. We stated inverse mask problems (or "layout inversion" problems) as nonlinear, constrained minimization problems over a domain of mask pixels. We considered linear, quadratic, and nonlinear formulations of the objective function. The linear problem is solved by an enhanced version of the Nashold projections. The quadratic problem is addressed by eigenvalue decompositions and quadratic programming methods. The general nonlinear formulation is solved by the local variations and gradient descent methods. We showed that the gradient of the objective function can be calculated analytically through convolutions. This is an important practical result because it enables layout inversion on a large scale in order of M log M operations for M pixels.
© (2006) Society of Photo-Optical Instrumentation Engineers (SPIE)
Yuri Granik, Yuri Granik, } "Fast pixel-based mask optimization for inverse lithography," Journal of Micro/Nanolithography, MEMS, and MOEMS 5(4), 043002 (1 October 2006). https://doi.org/10.1117/1.2399537 . Submission:
JOURNAL ARTICLE
13 PAGES


SHARE
RELATED CONTENT

11nm logic lithography with OPC-lite
Proceedings of SPIE (March 30 2014)
Lithography aware design optimization using ILT
Proceedings of SPIE (April 04 2011)
Hurdles in low k1 mass production
Proceedings of SPIE (May 11 2004)
GPU-accelerated inverse lithography technique
Proceedings of SPIE (May 11 2009)

Back to Top