1 October 2006 Evaluation of producer's and consumer's risks in scatterometry and scanning electron microscopy metrology for inline critical dimension metrology
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Abstract
Measurement characteristics in scatterometry and critical dimension–scanning electron microscopy (CD-SEM) for lot acceptance sampling of inline CD metrology were investigated by using a statistical approach with Monte Carlo simulation. By operation characteristics curve analysis, producer's risk and consumer's risk arising from sampling were clarified. Single use of scatterometry involves a higher risk, such risk being particularly acute in the case of large intrachip CD variation because it is unable to sufficiently monitor intrachip CD variation including local CD error. Substituting scatterometry for conventional SEM metrology is accompanied with risks, resulting in the increase of unnecessary cost. The combined use of scatterometry and SEM metrology in which the sampling plan for SEM is controlled by scatterometry is a promising metrology from the viewpoint of the suppression of risks and cost. This is due to the effect that CD errors existing in the distribution tails are efficiently caught.
© (2006) Society of Photo-Optical Instrumentation Engineers (SPIE)
Masafumi Asano, Masafumi Asano, Takahiro Ikeda, Takahiro Ikeda, Toru Koike, Toru Koike, Hideaki Abe, Hideaki Abe, } "Evaluation of producer's and consumer's risks in scatterometry and scanning electron microscopy metrology for inline critical dimension metrology," Journal of Micro/Nanolithography, MEMS, and MOEMS 5(4), 043006 (1 October 2006). https://doi.org/10.1117/1.2397034 . Submission:
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