1 January 2007 Defect reduction with special routing for immersion lithography
Author Affiliations +
J. of Micro/Nanolithography, MEMS, and MOEMS, 6(1), 010501 (2007). doi:10.1117/1.2718941
Abstract
This letter reports record-breaking low defect counts for immersion lithography, the mechanism for formation of particle-printing defects, and for two new exposure routings to achieve the low defect counts. Both new routings make the slot-scan directions parallel to the field-stepping directions, whereas in the normal routing the two directions are perpendicular to each other. From experimental data, the average defect count for one of the special routings is 4.8 per wafer, while it is 19.7 per wafer for normal routing.
Fu-Jye Liang, Lin-Hung Shiu, Chun-Kuang Chen, Li-Jui Chen, Tsai-Sheng Gau, Burn J. Lin, "Defect reduction with special routing for immersion lithography," Journal of Micro/Nanolithography, MEMS, and MOEMS 6(1), 010501 (1 January 2007). http://dx.doi.org/10.1117/1.2718941
Submission: Received ; Accepted
JOURNAL ARTICLE
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KEYWORDS
Semiconducting wafers

Particles

Immersion lithography

Printing

Scanners

Reticles

Wafer testing

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