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1 January 2007 Defect reduction with special routing for immersion lithography
Fu-Jye Liang, Lin-Hung Shiu, Chun-Kuang Chen, Li-Jui Chen, Tsai-Sheng Gau, Burn J. Lin
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Journal of Micro/Nanolithography, MEMS, and MOEMS, Vol. 6, Issue 1, 010501 (January 2007). https://doi.org/10.1117/1.2718941
Abstract
This letter reports record-breaking low defect counts for immersion lithography, the mechanism for formation of particle-printing defects, and for two new exposure routings to achieve the low defect counts. Both new routings make the slot-scan directions parallel to the field-stepping directions, whereas in the normal routing the two directions are perpendicular to each other. From experimental data, the average defect count for one of the special routings is 4.8 per wafer, while it is 19.7 per wafer for normal routing.
©(2007) Society of Photo-Optical Instrumentation Engineers (SPIE)
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Fu-Jye Liang, Lin-Hung Shiu, Chun-Kuang Chen, Li-Jui Chen, Tsai-Sheng Gau, and Burn J. Lin "Defect reduction with special routing for immersion lithography," Journal of Micro/Nanolithography, MEMS, and MOEMS 6(1), 010501 (1 January 2007). https://doi.org/10.1117/1.2718941
Published: 1 January 2007
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Cited by 3 scholarly publications.
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KEYWORDS
Semiconducting wafers
Particles
Immersion lithography
Printing
Scanners
Digital watermarking
Double patterning technology
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