1 January 2007 Control of chemical residue on photomasks using thermal treatment
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Abstract
We choose thermal treatment as part of a methodology to remove chemical residue on the surface of a mask. This new step of thermal treatment is inserted into our standard cleaning process for embedded attenuate phase shift masks (EAPSMs). The treatment is carried out in a modified hot plate system at various temperatures and times. After thermal treatment, ion chromatography measures the residual ions on a given surface. The thermal treatment is found to considerably reduce residual sulfate ions on the mask surface. The remaining sulfate ions on the mask are <0.18 ng/cm2 using thermal treatment.
© (2007) Society of Photo-Optical Instrumentation Engineers (SPIE)
Han-Byul Kang, Han-Byul Kang, Yong-Dae Kim, Yong-Dae Kim, Jong-Min Kim, Jong-Min Kim, Hyun-Joon Cho, Hyun-Joon Cho, Moon-Hwan Choi, Moon-Hwan Choi, Sang-Soo Choi, Sang-Soo Choi, Jee-Hwan Bae, Jee-Hwan Bae, Cheol-Woong Yang, Cheol-Woong Yang, } "Control of chemical residue on photomasks using thermal treatment," Journal of Micro/Nanolithography, MEMS, and MOEMS 6(1), 013008 (1 January 2007). https://doi.org/10.1117/1.2435715 . Submission:
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