1 January 2007 Control of chemical residue on photomasks using thermal treatment
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J. of Micro/Nanolithography, MEMS, and MOEMS, 6(1), 013008 (2007). doi:10.1117/1.2435715
Abstract
We choose thermal treatment as part of a methodology to remove chemical residue on the surface of a mask. This new step of thermal treatment is inserted into our standard cleaning process for embedded attenuate phase shift masks (EAPSMs). The treatment is carried out in a modified hot plate system at various temperatures and times. After thermal treatment, ion chromatography measures the residual ions on a given surface. The thermal treatment is found to considerably reduce residual sulfate ions on the mask surface. The remaining sulfate ions on the mask are <0.18 ng/cm2 using thermal treatment.
Han-Byul Kang, Yong-Dae Kim, Jong-Min Kim, Hyun-Joon Cho, Moon-Hwan Choi, Sang-Soo Choi, Jee-Hwan Bae, Cheol-Woong Yang, "Control of chemical residue on photomasks using thermal treatment," Journal of Micro/Nanolithography, MEMS, and MOEMS 6(1), 013008 (1 January 2007). http://dx.doi.org/10.1117/1.2435715
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KEYWORDS
Ions

Air contamination

Photomasks

Chromatography

Potassium

Phase shifts

Lithography

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