1 July 2007 Performance-driven optical proximity correction for mask cost reduction
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J. of Micro/Nanolithography, MEMS, and MOEMS, 6(3), 031005 (2007). doi:10.1117/1.2774994
Abstract
With continued aggressive process scaling in the subwavelength lithographic regime, resolution enhancement techniques (RETs) such as optical proximity correction (OPC) are an integral part of the design to mask flow. OPC creates complex features to the layout, resulting in mask data volume explosion and increased mask costs. Traditionally, the mask flow has suffered from a lack of design information, such that all features (whether critical or noncritical) are treated equally by RET insertion. We develop a novel minimum cost of correction (MinCorr) methodology to determine the level of correction of each layout feature, such that prescribed parametric yield is attained with minimum RET cost. This flow is implemented with model-based OPC explicitly driven by timing constraints. We apply a mathematical-programming-based slack budgeting algorithm to determine OPC level for all polysilicon gate geometries. Designs adopted with this methodology achieve up to 20% Manufacturing Electron Beam Exposure System (MEBES) data volume reduction and 39% OPC run-time improvement.
Puneet Gupta, Andrew B. Kahng, Dennis Sylvester, Jie Yang, "Performance-driven optical proximity correction for mask cost reduction," Journal of Micro/Nanolithography, MEMS, and MOEMS 6(3), 031005 (1 July 2007). http://dx.doi.org/10.1117/1.2774994
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KEYWORDS
Optical proximity correction

Tolerancing

Photomasks

Critical dimension metrology

Resolution enhancement technologies

Model-based design

Lithography

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