1 July 2007 Complementary dose and geometrical solutions for electron beam direct write lithography proximity effects correction: application for sub-45-nm node product manufacturing
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Abstract
After the successful results obtained in the last few years, electron beam direct write (EBDW) lithography for use in integrated circuit manufacturing has now been demonstrated. However, throughput and resolution capabilities need to be improved to push its interest for fast cycle production and advanced research and development applications. In this way, the process development needs good patterns dimensional accuracy, i.e., a better control of the proximity effects caused by backscattering electrons and others phenomenon. In this work, the limitations of the dose modulation method are investigated through the change of dose number steps and the use of a more accurate point spread function. To continue reducing feature sizes, a method to provide a complementary correction to the dose modulation solution is proposed. This rule-based electron beam proximity correction, or REBPC, provides good results down to 40 nm.
© (2007) Society of Photo-Optical Instrumentation Engineers (SPIE)
Serdar Manakli, Serdar Manakli, C. Soonekindt, C. Soonekindt, Laurent Pain, Laurent Pain, J. C. Le Denmat, J. C. Le Denmat, Jerome Todeschini, Jerome Todeschini, B. Icard, B. Icard, B. Minghetti, B. Minghetti, } "Complementary dose and geometrical solutions for electron beam direct write lithography proximity effects correction: application for sub-45-nm node product manufacturing," Journal of Micro/Nanolithography, MEMS, and MOEMS 6(3), 033001 (1 July 2007). https://doi.org/10.1117/1.2770472 . Submission:
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